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IXTA 160N085T IXTP 160N085T
IXTQ 160N085T
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ.
Max.
TO-3P (IXTQ) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10 V; I D = 50A, pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 60 V, I D = 35A
R G = 5 ? (External)
V GS = 10 V, V DS = 40 V, I D = 80 A
64
85
6400
927
92
37
61
65
36
164
48
45
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.42 K/W
R thCK
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ.
Max.
I S
V GS = 0 V
160
A
I SM
V SD
t rr
Q RM
Repetitive
I F = 50 A, V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s
V R = 25 V, V GS = 0 V
100
0.6
350
1.2
A
V
ns
μ C
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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IXTQ160N10T
功能描述:MOSFET 160 Amps 100V 6.9 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ16N50P
功能描述:MOSFET 16.0 Amps 500 V 0.4 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ170N10P
功能描述:MOSFET 170 Amps 100V 0.009 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ180N055T
功能描述:MOSFET 180 Amps 55V 0.004 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ180N085T
功能描述:MOSFET 180 Amps 85V 5.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ180N10T
功能描述:MOSFET 180 Amps 100V 6.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTQ18N60P
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